Green Silicon Carbide Sic 99% 325 Mesh

• Customization: Available
• Feature: Long Time Materials
• Refractoriness (℃): Refractoriness> 2000
• Model NO.: Green Silicon Carbide
• Shape: Powder
• Type: Refractory Material
• Sic: 98%
• Fe2o3: 0.6%
• The Free Carbon: 0.2%
• Hardness: 9.6
• Bulk Density: 1.42~1.50 g/cm3
• Sample: Free
• Color: Black /Green
• Material: Quartz Sand Char, Silicon Carbide (Sic)
• Proportion: 3.85g/cm3
• Abrasive Grain Sizes: 12-220#
• Package Type: 25kg PVC Small Bags in a 1 Mt Big Bag or as Your R
• H2O%: <0.5
• Product Name: Silicon Carbide
• Delivery: Sea
• Transport Package: According to Customers Requirments
• Specification: according to customers requirments
• Trademark: N/M
• Origin: China
• Production Capacity: 30000ton

Product Description

Product Description

 

Green silicon carbide is a synthetic high-hardness material, the main component of which is silicon carbide (SiC), and is named for its green color. It is made of petroleum coke and high-quality silica as the main raw materials, with salt as an additive, and is smelted at high temperature in a resistance furnace. Green silicon carbide has the characteristics of high purity, high hardness, and high mechanical strength, and is an important product in the abrasive industry.

Black Silicon Carbide is mainly made of Quartz sand, petroleum coke, smelted by above2500°Cin the electric furnace. The hardness is between corundum and diamond. The Hardness is superior to corundum, it has the function of conductivity and thermal conductivity. It is suitable to process metals and non-metallic materials, such as gray cast iron, non-ferrous metal, stone, leather, rubber, and on on. It also widely used in refractories, metallurgic additives.
Because of the rarity of natural moissanite, most silicon carbide is synthetic. It is used as an abrasive, and more recently as a semiconductor and diamond simulant of gem quality. The simplest manufacturing process is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, also can be converted to SiC by heating with graphite at 1,500 °C (2,730 °F)
Synthetic SiC crystals ~3 mm in diameter.
Synthetic SiC Lely crystals
The material formed in the Acheson furnace varies in purity, according to its distance from the graphite resistor heat source. Colorless, pale yellow and green crystals have the highest purity and are found closest to the resistor. The color changes to blue and black at greater distance from the resistor, and these darker crystals are less pure. Nitrogen and aluminium are common impurities, and they affect the electrical conductivity of SiC.
Pure silicon carbide can be made by the so-called Lely process, in which SiC powder is sublimated into high-temperature species of silicon, carbon, silicon dicarbide (SiC2), and disilicon carbide (Si2C) in an argon gas ambient at 2500 °C and redeposited into flake-like single crystals,sized up to 2×2 cm, at a slightly colder substrate. This process yields high-quality single crystals, mostly of 6H-SiC phase (because of high growth temperature). A modified Lely process involving induction heating in graphite crucibles yields even larger single crystals of 4 inches (10 cm) in diameter, having a section 81 times larger compared to the conventional Lely process.Cubic SiC is usually grown by the more expensive process of chemical vapor deposition (CVD).Homoepitaxial and heteroepitaxial SiC layers can be grown employing both gas and liquid phase approaches.Pure silicon carbide can also be prepared by the thermal decomposition of a polymer, poly(methylsilyne), under an inert atmosphere at low temperatures. Relative to the CVD process, the pyrolysis method is advantageous because the polymer can be formed into various shapes prior to thermalization into the ceramic.

Product Specifications

 

Name	Specification	Color	Purity
Silicon Carbide SiC powder	500nm	black	>99%
SiC powder 500nm	1um	black	>99%
SiC powder 500nm CAS 409-21-2 price	2~5um	black	>99%

 

	F24	F36	F60	F80	F120	F180	F220
SIC	98.48	98.46	98.6	98.6	98.5	98.5	98.5
Fe2O3	0.32	0.31	0.28	0.32	0.26	0.31	0.33
F.C.	0.16	0.16	0.16	0.16	0.16	0.16	0.16

 

Coarse Grit	20	15	9	22	15	5.6	9
Basal Grit	49	65	67	63	49	59.4	72
Mixed Grit	76.5	84	90.2	77	82.5	81.4	88.5
Fine Grit	0.3	0.1	0.3	0.5	0.4	0.5

	F320	F400	F600	F800	F1000	F1200
SIC	98.5	98	97.55	97	97.24	97
Fe2O3	0.4	0.4	0.36	0.4	0.25	0.4
F.C.	0.4	0.4	0.4	0.4	0.4	0.4

 

ds3	49	32	19	14	10	7
ds50	29.2±1.5	17.3±1.0	9.3±1.0	6.5±1.0	4.5±0.8	3.0±0.5
ds95	16.5	8	3	2	1	1(80%)

 

Equipment catalog	Quantity	Equipment catalog	Quantity
16,500 watts refining furnace	3	"star model"crusher	15
22,500 watts refining furnace	1	Raymond mill	2
Jaw crusher	6	Ultrasonic sifting	20
Induced draft ball mill	2	Acid/alkali cleaning tank	60
Air flow classifier	15	Magnetic separator	8

Grit Size Available (P, F)
P series: P24, P30, P36, P40, P50, P60, P80, P100, P120, P150, P180, P220, P240, P280, P320, P360, P400, P500, P600, P800, P1000, P1200, P1500, P2000, P2500, P3000
F series: F14, F16,F22,F24,F30, F36, F40, F46, F54, F60, F70, F80, F90, F100, F120, F150, F180, F220, F230, F240, F280, F320, F360, F400, F500, F600, F800, F1000, F1200

 

Detailed Photos

 

 

Application

 

 

Packaging & Shipping

 

Product Packing and Delivery:

1) 25kgs/plastic woven bag and 40bags/wooden pallet.
2) 20kgs/paper bag and 50bags/wooden pallet.
3) 1mt/bulk bag
4) customized packaging
The above quantity without pallet ,the goods will be sent within 7-15days after receiving your order.